Class 1 & 2: Overview of Non-volatile Memory &
Crystal Structure
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Describe the difference between volatile and non-volatile memory.
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List several non-volatile memory devices.
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List constraints on memory technologies used in portable electronic
devices.
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Define
lattice, unit cell, and basis.
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Draw the lattices for SC, BCC, and FCC.
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Determine
lattice type, atoms per lattice site
(basis) and atoms per unit cell for varying crystal structures.
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Differentiate between single crystal and polycrystalline materials.
Class 3: Definition of Resistivity & Overview of
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Use Ohm’s Law and equations for resistance to calculate current in a
given setting.
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Describe the difference between conductivity, resistivity, and
resistance,
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Describe the relationship between electronic orbitals in an atom and
bands in a solid material.
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Differentiate between the conductivity of metals, semiconductors, and
insulators. Relate these
differences to their respective band structures.
Class 4: Semiconductor Doping & NMOS
(FLASH)
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Define intrinsic and extrinsic semiconductors.
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Explain how the addition of donors and acceptors alter the conductivity
of a semiconductor.
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Draw a cross section of a NMOS transistor and explain the basic steps of
operation.
Class 5: Capacitance and FLASH Operation
(FLASH)
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Define capacitance.
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Explain how charge is stored across a dielectric in a capacitor.
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Draw a cross section of a FLASH device and explain its basic operation in
the on and off states.
Class 6: Fundamentals of what makes a material
magnetic
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Explain the basic classes
of magnetic behavior: diamagnetic, paramagnetic, ferromagnetic, ferrimagnetic,
and antiferromagnetic.
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Distinguish between B, M, and H.
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Calculate the magnetic field in a solenoid.
Class 7: Magnetic Domains, Hysteresis (MRAM)
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Identify the following
points on a hysteresis loop of a ferro- or ferrimagnetic material: remanent
magnetization (MR), remanence (BR), coercivity (HC),
saturation magnetization (Msat), and saturation induction (Bsat).
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Describe
the operation to write a bit in a magnetic hard drive.
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