Learning Objectives
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Class 1 & 2: Overview of Non-volatile Memory & Crystal Structure

  1. Describe the difference between volatile and non-volatile memory.

  2. List several non-volatile memory devices.

  3. List constraints on memory technologies used in portable electronic devices.

  4. Define lattice, unit cell, and basis.

  5. Draw the lattices for SC, BCC, and FCC.

  6. Determine lattice type, atoms per lattice site (basis) and atoms per unit cell for varying crystal structures.

  7. Differentiate between single crystal and polycrystalline materials.

Class 3: Definition of Resistivity & Overview of

  1. Use Ohm’s Law and equations for resistance to calculate current in a given setting.

  2. Describe the difference between conductivity, resistivity, and resistance,

  3. Describe the relationship between electronic orbitals in an atom and bands in a solid material.

  4. Differentiate between the conductivity of metals, semiconductors, and insulators.  Relate these differences to their respective band structures.

Class 4: Semiconductor Doping & NMOS (FLASH)

  1. Define intrinsic and extrinsic semiconductors.

  2. Explain how the addition of donors and acceptors alter the conductivity of a semiconductor.

  3. Draw a cross section of a NMOS transistor and explain the basic steps of operation.

Class 5: Capacitance and FLASH Operation (FLASH)

  1. Define capacitance.

  2. Explain how charge is stored across a dielectric in a capacitor.

  3. Draw a cross section of a FLASH device and explain its basic operation in the on and off states.

Class 6: Fundamentals of what makes a material magnetic

  1. Explain the basic classes of magnetic behavior: diamagnetic, paramagnetic, ferromagnetic, ferrimagnetic, and antiferromagnetic.

  2. Distinguish between B, M, and H.

  3. Calculate the magnetic field in a solenoid.

Class 7: Magnetic Domains, Hysteresis (MRAM)

  1. Identify the following points on a hysteresis loop of a ferro- or ferrimagnetic material: remanent magnetization (MR), remanence (BR), coercivity (HC), saturation magnetization (Msat), and saturation induction (Bsat).

  2.  Describe the operation to write a bit in a magnetic hard drive.

 


This is a multi-university effort with contributions from:

SJSU logo
Chemical and Materials Engineering
Prof. Stacy Gleixner
Prof. Hilary Lackritz

University of Nevada, Reno
Metallurgical and Materials Engineering
Prof. Olivia Graeve

University of Florida Wordmark
Materials Science and Engineering
Prof. Elliot Douglas


Engineering
Prof. Laura Demsetz

 
Materials Science and Engineering
Prof. Amy Moll

The curriculum development is a three year long project sponsored by the National Science Foundation (DUE #0341633).  The development work began in June 2004.  Stay tuned to this site for updates on our progress.

This page is maintained by Prof. Stacy Gleixner.  SJSU logo
San Jose State University
Questions or problems please send email to gleixner@email.sjsu.edu or call (408)924-4051.
The page was last updated 10/19/04 .