EE221: PRINCIPLES OF SEMICONDUCTOR DEVICES I

 

David W. Parent

Assistant Professor

Office Hours:

 

EE Department SJSU

PH: 408.924.3963

EM: dparent@email.sjsu.edu

HP: http://www.engr.sjsu.edu/dparent

 

Course Description:

 

Study of semiconductors in equilibrium and nonequilibrium conditions; principles of semiconductor device fabrication, p-n junctions; and junction transistors; device modeling for circuit analysis.  Synopsys TCAD tools will be used.

 

Resource Guide to Unix CAD Tools:

http://www.engr.sjsu.edu/dparent/ICGROUP/index.htm

 

How to get a Unix account:

http://ecs-staff1.engr.sjsu.edu/cgi-bin/sad/wel/account.pl

(You must be registered, and have paid your fees.  Please note this registration site is only available from within the Engineering building (Not Wireless)).

 

Sentaurus Silicon Bar Tutorial

 

Sentaurus Diode tutorial

 

 

Tar file for Sentaurus tutorial

 

Tar File for SWB Sentaurus Tutorial for silicon bar (mobility models, doping and grid spacing affects on R)

 

Tar file for extracting gamma

 

Tar File for hafnium oxide nmos transistor

 

Tar File for hafnium oxide mis capacitor

 

Tar File for a simple SOI NMOS Transistor

 

Tar File for MIS solar cell

 

Tar File for InGaAs MOSFET

 

Tar File for Simple Solar Cell done with “slow method”

 

Tar File for Simple AR Coating, Solar Cell done with time reducing method

 

Tar File for HLE AR Coating Solar Cell done with time reducing method

 

Tar File for MIS solar Cell with AR coating

 

Tar File for CMOS inverter with Radiation

 

Tar file for SiC BJT

 

Tar file for Silicon Diode Breakdown voltage simulation

 

Tar file for LDMOS simulation

 

Generic Preferences for SWB

 

Sentaurus manuals

 

MOS Capacitor example in Sentaurus

 

Excel sheet with ID VD, VD data for spice level three extraction

 

Tar  file for a simple HFO MOSFET

 

 

Green Sheet (Course Outline)

 

Chapter 2 Notes

Chapter 3 Notes                                                                                                         

Chapter 4 Notes

Chapter 4 Supplement on spice parameter extraction

Mos Capacitor Notes

Sentaurus MIS capacitor example that calculates Wm , and based the mesh on Wm.

MOSFET Notes

 

Sample Midterm 1

F07 midterm Solutions

F07 midterm 2 Solutions

 

HW1

NA

HW2

Solution

HW3

Solution

HW4

NA

HW5

Solution

HW6

 

HW7

HW7

HW8

HW8 old ni   HW8 9.65x109 ni

 

Grades F07

 

Class 1 Introduction, Course objectives, Link to spice and design flow, layout extraction, TCAD

Class 2 Resistors described, with device physics, how to draw, intrinsic semiconductors, doped semiconductors, chemical bonds

Class 3, Unix Lab Day

Class 4, Photolithography, registration error, trends

Class 5 Diffusion and Oxidation

Class 6 Effective mass, Mobility, and EBD.

Class 7, Introduction to the diode

Class 8 CV Dependence of PN Junction

Class 9 Spice Parameters

Class 10 Review

Class 11  Exam

Class 12  Exam Results

Class 13 Lab Day

Class 14 MOS Capacitor

Class 15 Forward biased diode

Class 16 Diode Spice parameters, Breakdown mechanisms, metal-semiconductor junctions

Class 17

Class 18 Everything you wanted to know about MOSFETs but were afraid to ask

Everything you wanted to know about BJTS

 

 

 

Excel Workbook of four diode IV curves

 

 

 

Results of a 2001 Graduate Survey